Njm4558v datasheet 2n3904

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Njm4558v datasheet 2n3904

Parameters and Characteristics. 2N3565 Transistor Datasheet pdf, 2N3565 Equivalent. Njm4558v datasheet 2n3904. 2N5485 JFET N Channel Transistor; 2N5485 JFET N Channel Transistor. datasheetcatalog. Sign up for price alert. G D S 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 N- Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On 2n3904 Resistance analog switching. NJM4558 datasheet , diodes, NJM4558 data sheet : NJRC - DUAL OPERATIONAL AMPLIFIER, 2n3904 integrated circuits, NJM4558 circuit, datasheet, Datasheet search site for Electronic Components , Semiconductors, triacs, alldatasheet other semiconductors. Similar Products by Function.
njm4558v com Datasheet ( data sheet) search for integrated circuits ( ic) 2n3904 transistors , semiconductors , capacitors, other electronic components such as resistors diodes. Email to a Friend. 2N3903, 2N3904 2n3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon Features • Pb− Free Package May be Available. Manufacturer Part No: 2N5485 Package / Case: TO- 92 RoHS: Yes Datasheet: Click Here Specifications Product Category: Transistors 2n3904 RF JFET Configuration: Single Transistor. NJM4558 DUAL OPERATIONAL AMPLIFIER Components datasheet pdf data sheet FREE from Datasheet4U. NJM4558L datasheet alldatasheet, njm4558v NJM4558L datasheets, datasheet, NJM4558L circuit : NJRC - njm4558v DUAL OPERATIONAL AMPLIFIER, NJM4558L pdf Datasheet search site for.
Qty Available: 88622. 2N3904 from DIODES Incorporated. 2N3904 datasheet alldatasheet, 2N3904 datasheets, datasheet, 2N3904 njm4558v pdf, 2N3904 circuit : PHILIPS - NPN switching transistor Datasheet search site for Electronic. 2N3819 Datasheet Datasheets, 2N3819 manual, datenblatt, 2N3819, 2N3819 PDF, Electronics 2N3819, 2N3819 Data sheet, free, datasheet, 2N3819 pdf, alldatasheet data. 2N5486 JFET VHF/ UHF Amplifiers N− Channel — Depletion Features • Pb− Free Packages are Available* MAXIMUM RATINGS ( TJ = 25° C unless otherwise noted) Rating Symbol Value Unit Drain− Gate Voltage VDG 25 Vdc Reverse Gate− Source Voltage njm4558v VGSR 25 Vdc Drain Current ID 30 mAdc Forward Gate njm4558v Current IG( f) 10 mAdc Total Device Dissipation 2n3904 @ TC. NJM4558V: SSOP8 ( Active) 2n3904 NJM4558E: SOP8 JEDEC 150mil ( Active) Related Products. 1 Review | Add Your Review. The product status of the njm4558v device( s) described in this data sheet may have changed since this data sheet was published. JFETs - General Purpose N- Channel - Depletion N- Channel Junction Field Effect Transistors depletion mode ( Type A) designed for audio switching applications.

Please 2n3904 consult the most recently issued data sheet before initiating or completing a design. NPN switching transistor 2N3904 DATA SHEET STATUS Notes 1. This datasheet has been download from: www. com Datasheets for electronics components. Select the njm4558v part name and then you can download the 2n3904 datasheet in PDF format. Find the PDF Datasheet Specifications Distributor Information.

N- Channel JFET VGS( off) ( V) V( BR) GSS Min ( V) gfs Min ( mS) IDSS njm4558v Min ( 2n3904 mA) – 8 – 25 2 2 Excellent High- Frequency Gain: Gps 11 dB @ 400 MHz Very Low Noise: 3 njm4558v dB @ 400 MHz Very Low Distortion High ac/ dc Switch Off- Isolation High Gain: AV = 60 @ 100 2n3904 A Wideband High Gain Very High System Sensitivity High njm4558v Quality of Amplification. The G− Suffix Denotes a Pb− Free Lead Finish MAXIMUM RATINGS Rating Symbol Value Unit Collector− Emitter Voltage VCEO 40 Vdc Collector− Base Voltage VCBO 60 Vdc Emitter− Base Voltage VEBO 6.


Datasheet

Buy Transistor 2N3904 NPN General Purpose. * This product is subject to a tariff. See detail in the cart. 2N3904 * MMBT3904 * * PZT3904 PD Total Device Dissipation Derate above 25° C 625 5. 0 mW mW/ ° C RθJC Thermal Resistance, Junction to Case 83. 3 ° C/ W RθJA Thermal Resistance, Junction to Ambient° C/ W * Device mounted on FR- 4 PCB 1.

njm4558v datasheet 2n3904

The NJM4558 is a dual high- gain operational amplifier with internal compensation circuit and constructed on a single silicon chip. It offers excellent characteristics by combining the parameters adjusted for a monolithic chip. The channel separation characteristic is suitable for measuring instruments.